DEVICE FOR SINGLE MOLECULE DETECTION AND FABRICATION METHODS THEREOF

• Main Authors: ELIBOL OGUZ H, GARDNER DONALD S
• Format: Patent
• Language: English
• Published: 30.06.2016
• Subjects: CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; MEASURING; METALLURGY; PHYSICS; PRINTED CIRCUITS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TESTING

Disclosed herein is a device comprising an electrode pair comprising a first electrode and a second electrode; a nanogap channel; wherein a portion of the nanogap channel is sandwiched between the first electrode and the second electrode; wherein at least a portion of the first electrode directly faces at least a portion of the second electrode, across the nanogap channel; wherein the portion of the first electrode and the portion of the second electrode are exposed to an interior of the nanogap channel; and wherein the first electrode or the second electrode comprises doped diamond, silicon carbide or a combination thereof. Also disclosed herein is a method comprising forming on a carrier substrate a first material layer comprising doped diamond, silicon carbide or a combination thereof; bonding the first material layer onto an electrical circuit.