MULTI-LAYERED INTEGRATED CIRCUIT WITH SELECTIVE TEMPERATURE COEFFICIENT OF RESISTANCE

The integrated circuit described herein includes: a first resistor having a first trench in a dielectric layer, the first trench having a first width; a second resistor having a second trench in the dielectric layer, the second trench having a second width not equal to the first width; a trench in a...

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Bibliographic Details
Main Authors LEE SUNGJAE, NOWAK EDWARD J, DENG YANQING, WALLNER JIN Z
Format Patent
LanguageEnglish
Published 23.06.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The integrated circuit described herein includes: a first resistor having a first trench in a dielectric layer, the first trench having a first width; a second resistor having a second trench in the dielectric layer, the second trench having a second width not equal to the first width; a trench in a dielectric layer; a first conductive layer having a first TCR and coating at least a portion of the first trench and the second trench; and a second conductive layer having a second TCR and coating at least a portion of the first conductive layer in each of the first trench and the second trench, wherein the second TCR is not equal to the first TCR, and wherein the TCR of the IC is selected based on a dimension of the trench, a thickness of the first conductive layer, and a thickness of the second conductive layer.
Bibliography:Application Number: US201414578678