THIN FILM III-V OPTOELECTRONIC DEVICE OPTIMIZED FOR NON-SOLAR ILLUMINATION SOURCES

An optoelectronic device with high band-gap absorbers optimized for indoor use and a method of manufacturing are disclosed. The optoelectronic semiconductor device comprises a p-n structure made of one or more compound semiconductors, wherein the p-n structure comprises a base layer and an emitter l...

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Bibliographic Details
Main Authors ZHANG LING, FRANCE CHRISTOPHER, HE GANG, COWLEY SAM, KAYES BRENDAN M, HIGASHI GREGG S
Format Patent
LanguageEnglish
Published 02.06.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An optoelectronic device with high band-gap absorbers optimized for indoor use and a method of manufacturing are disclosed. The optoelectronic semiconductor device comprises a p-n structure made of one or more compound semiconductors, wherein the p-n structure comprises a base layer and an emitter layer, wherein the base and/or emitter layers comprise materials whose quantum efficiency spectrum is well-matched to a spectrum of incident light, wherein the incident light is from a light source other than the sun; and wherein the device is a flexible single-crystal device. The method for forming an optoelectronic device optimized for the conversion of light from non-solar illumination sources into electricity, comprises depositing a buffer layer on a wafer; depositing a release layer above the buffer layer; depositing a p-n structure above the release layer; and lifting off the p-n structure from the wafer.
Bibliography:Application Number: US201615006003