SEMICONDUCTOR DEVICE WITH FIN FIELD EFFECT TRANSISTORS

• Main Authors: JEONG HEEDON, YOUN JONGMIL, KIM SANGYOON, YOO JE-MIN, RHEE HWASUNG, KIM WOOSIK
• Format: Patent
• Language: English
• Published: 02.06.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device includes a substrate with a NMOS region and a PMOS region, a device isolation layer on the substrate to define active fins, and gate patterns on the substrate to have a length direction crossing the active fins, wherein the device isolation layer includes diffusion brake regions between respective pairs of the active fins, the diffusion brake regions being disposed adjacent to each other in a width direction of the gate patterns, and wherein a width of the diffusion brake region in the NMOS region is different from a width of the diffusion brake region in the PMOS region.