OPTICAL PROXIMITY CORRECTION TAKING INTO ACCOUNT WAFER TOPOGRAPHY

A method of manufacturing semiconductor devices employing optical proximity correction (OPC) is provided including providing a design layout of masks, performing OPC on the design layout to obtain a post OPC layout, performing post chemical mechanical polishing (CMP) topography simulations of a wafe...

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Bibliographic Details
Main Authors KUNCHA RAKESH KUMAR, SAMY ARAVIND NARAYANA
Format Patent
LanguageEnglish
Published 02.06.2016
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CALCULATING
CINEMATOGRAPHY
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:A method of manufacturing semiconductor devices employing optical proximity correction (OPC) is provided including providing a design layout of masks, performing OPC on the design layout to obtain a post OPC layout, performing post chemical mechanical polishing (CMP) topography simulations of a wafer to obtain the surface topography of the wafer, calculating a focus shift of a nominal focus caused by the surface topography of the wafer to obtain a shifted nominal focus, determining a process window based on the shifted nominal focus, simulating a nominal image based on the post OPC layout and the shifted nominal focus and process window images based on the post OPC layout and the process window, and identifying hotspots based on the simulated nominal and process window images.
Bibliography:Application Number: US201414556711