MEMRISTOR AND METHODS FOR MAKING THE SAME

An example of the memristor includes a bottom electrode, a switchable material positioned on the bottom electrode, and a cured negative or positive resist that forms an interlayer dielectric positioned on the switchable material. An open area is formed in the interlayer dielectric. The open area exp...

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Bibliographic Details
Main Authors SHENG XIA, LI XUEMA, LAM SITY
Format Patent
LanguageEnglish
Published 19.05.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An example of the memristor includes a bottom electrode, a switchable material positioned on the bottom electrode, and a cured negative or positive resist that forms an interlayer dielectric positioned on the switchable material. An open area is formed in the interlayer dielectric. The open area exposes a surface of the switchable material. A top electrode is positioned in contact with the exposed surface of the switchable material at the open area.
Bibliography:Application Number: US201314898503