SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

To provide a semiconductor device having improved reliability. An element isolation region comprised mainly of silicon oxide is buried in a trench formed in a semiconductor substrate. The semiconductor substrate in an active region surrounded by the element isolation region has thereon a gate electr...

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Bibliographic Details
Main Authors OKAMOTO SHINICHI, YOSHIDA TETSUYA, OGASAWARA MAKOTO, AONO HIDEKI
Format Patent
LanguageEnglish
Published 19.05.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To provide a semiconductor device having improved reliability. An element isolation region comprised mainly of silicon oxide is buried in a trench formed in a semiconductor substrate. The semiconductor substrate in an active region surrounded by the element isolation region has thereon a gate electrode for MISFET via a gate insulating film. The gate electrode partially extends over the element isolation region and the trench has a nitrided inner surface. Below the gate electrode, fluorine is introduced into the vicinity of a boundary between the element isolation region and a channel region of MISFET.
Bibliography:Application Number: US201514934745