DEVICES HAVING INHOMOGENEOUS SILICIDE SCHOTTKY BARRIER CONTACTS

A method of fabricating Schottky barrier contacts for an integrated circuit (IC). A substrate including a silicon including surface is provided. A plurality of transistors are formed on the silicon including surface in at least one PMOS region and at least one NMOS region, where the plurality of tra...

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Bibliographic Details
Main Authors HINKLE CHRISTOPHER L, SHAW JUDY BROWDER, BUIE CREIGHTON T, RILEY DEBORAH JEAN
Format Patent
LanguageEnglish
Published 12.05.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating Schottky barrier contacts for an integrated circuit (IC). A substrate including a silicon including surface is provided. A plurality of transistors are formed on the silicon including surface in at least one PMOS region and at least one NMOS region, where the plurality of transistors include at least one exposed p-type surface region and at least one exposed n-type surface region. Pre-silicide cleaning removes oxide from the exposed p-type surface regions and exposed n-type surface regions. A plurality of metals are deposited including Yb and Pt to form at least one metal layer on the substrate. The metal layer is heated to induce formation of an inhomogeneous silicide layer including both Ptsilicide and Ybsilicide on the exposed p-type and exposed n-type surface regions. Unreacted metal of the metal layer is stripped.
Bibliography:Application Number: US201614987953