DEPOSITION METHOD FOR TUNGSTEN-CONTAINING FILM USING TUNGSTEN COMPOUND, AND PRECURSOR COMPOSITION FOR DEPOSITING TUNGSTEN-CONTAINING FILM, COMPRISING TUNGSTEN COMPOUND

• Main Authors: YOO BEOM-SANG, LEE HONG-JOO, HAN WON SEOK
• Format: Patent
• Language: English
• Published: 05.05.2016
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present disclosure relates to a deposition method for a tungsten-containing film using a tungsten compound and a precursor composition for depositing the tungsten-containing film including the tungsten compound.