GAS SUPPLY APPARATUS

• Main Authors: CHONG CHEOL WOO, LEE YONG HYUN, LEE MYUNG JIN, CHOI JAE WOOK, YANG SEUNG YONG, KANG HO CHUL, HWANG CHUL JOO
• Format: Patent
• Language: English
• Published: 28.04.2016
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a gas supply device and, more specifically, to a gas supply device which can improve the flow of process gas within a process chamber and can increase a degree of uniformity of a deposition layer. The gas supply device, according to the present invention, comprises: a lead having a gas pipe connected thereto; a first plate for discharging, to a process chamber, gas introduced into the lead; a second plate provided so as to disperse gas flowing towards the bottom by being arranged between the lead and the first plate; a plurality of discharge holes on the first plate; and a plurality of discharge holes formed on the second plate, wherein a discharge hole formed at a corner section of the second plate is arranged in a different state from that of a discharge hole of a corner section formed at the same position on the first plate.