GAS BARRIER FILM AND METHOD FOR PRODUCING THE SAME

• Main Author: ITO HIROHIDE
• Format: Patent
• Language: English
• Published: 21.04.2016
• Subjects: ADHESIVES; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G; CHEMICAL PAINT OR INK REMOVERS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS BASED THEREON; CORRECTING FLUIDS; DIFFUSION TREATMENT OF METALLIC MATERIAL; DYES; FILLING PASTES; GENERAL PROCESSES OF COMPOUNDING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INKS; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; ORGANIC MACROMOLECULAR COMPOUNDS; PAINTS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; POLISHES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; THEIR PREPARATION OR CHEMICAL WORKING-UP; USE OF MATERIALS THEREFOR; WOODSTAINS; WORKING-UP

[Object] To provide a means capable of further improving gas barrier capabilities and durability of gas barrier capabilities for a gas barrier film. [Solving Means] A gas barrier film having: a substrate; a first barrier layer that is arranged on at least one surface of the substrate, has a film density of 1.5 to 2.1 g/cm3, and includes an inorganic compound; and a second barrier layer that is formed on the surface of the substrate on the same side where the first barrier layer is formed and includes silicon atoms, oxygen atoms, and at least one added element selected from the group consisting of elements of Groups 2-14 of the long form of the periodic table (excluding silicon and carbon), the abundance ratio of oxygen atoms to silicon atoms (O/Si) being 1.4 to 2.2, and the abundance ratio of nitrogen atoms to silicon atoms (N/Si) being 0 to 0.4.