METHOD FOR PROCESSING A CARRIER, A METHOD FOR OPERATING A PLASMA PROCESSING CHAMBER, AND A METHOD FOR PROCESSING A SEMICONDUCTOR WAFER

According to various embodiments, a method for processing a carrier may include: performing a dry etch process in a processing chamber to remove a first material from the carrier by an etchant, the processing chamber including an exposed inner surface including aluminum and the etchant including a h...

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Bibliographic Details
Main Authors BRENCHER LOTHAR, RENNER MICHAEL
Format Patent
LanguageEnglish
Published 31.03.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to various embodiments, a method for processing a carrier may include: performing a dry etch process in a processing chamber to remove a first material from the carrier by an etchant, the processing chamber including an exposed inner surface including aluminum and the etchant including a halogen; and, subsequently, performing a hydrogen plasma process in the processing chamber to remove a second material from at least one of the carrier or the inner surface of the processing chamber.
Bibliography:Application Number: US201414501055