APPARATUS OF INSPECTING RESISTIVE DEFECTS OF SEMICONDUCTOR DEVICES AND INSPECTING METHOD USING THE SAME

A method of inspecting a resistive defect of a semiconductor device is provided. The method includes loading a semiconductor wafer on a wafer stocker, transferring the semiconductor wafer into a laser anneal module, annealing a portion of the semiconductor wafer using a laser beam in an atmospheric...

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Bibliographic Details
Main Authors JUN CHUNG-SAM, PARK MI-RA, LEE SANG-KIL, SUNG DAE-JIN, LEE NA-KYOUNG, YANG YU-SIN, JEONG YONG-DEOK
Format Patent
LanguageEnglish
Published 24.03.2016
Subjects
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
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Summary:A method of inspecting a resistive defect of a semiconductor device is provided. The method includes loading a semiconductor wafer on a wafer stocker, transferring the semiconductor wafer into a laser anneal module, annealing a portion of the semiconductor wafer using a laser beam in an atmospheric pressure, transferring the annealed semiconductor wafer into an E-beam scanning module in a vacuum, scanning the annealed portions of the semiconductor wafer with an E-beam, and collecting secondary electrons emitted from the annealed portions of the semiconductor wafer.
Bibliography:Application Number: US201514677173