SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

According to one embodiment, a semiconductor memory device includes a stacked body, a selection gate electrode, a semiconductor pillar, a first insulating member, a second insulating member, a third insulating member. The stacked body is provided on the substrate. The selection gate electrode is pro...

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Bibliographic Details
Main Authors IGUCHI TADASHI, IWASE MASAO, KIDO NOZOMI
Format Patent
LanguageEnglish
Published 17.03.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to one embodiment, a semiconductor memory device includes a stacked body, a selection gate electrode, a semiconductor pillar, a first insulating member, a second insulating member, a third insulating member. The stacked body is provided on the substrate. The selection gate electrode is provided on the stacked body. The first insulating member divides the stacked body in a first direction. The second insulating member is provided in an area directly above the first insulating member and dividing the selection gate electrode in the first direction. The third insulating member is provided in a region other than the area directly above the first insulating member and dividing the selection gate electrode in the first direction. An average width of the second insulating member in the first direction is larger than an average width of the third insulating member in the first direction.
Bibliography:Application Number: US201514657417