SEMICONDUCTOR MEMORY DEVICE

According to one embodiment, the first columnar part includes a first channel body and a first charge storage film. The second columnar part includes a second channel body and a second charge storage film. The second columnar part is provided adjacent in the first direction to the first columnar par...

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Bibliographic Details
Main Authors KIDOH MASARU, SHIMOJO YOSHIRO, KATSUMATA RYOTA, KITO MASARU, YANAI YOSHIHIRO
Format Patent
LanguageEnglish
Published 10.03.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to one embodiment, the first columnar part includes a first channel body and a first charge storage film. The second columnar part includes a second channel body and a second charge storage film. The second columnar part is provided adjacent in the first direction to the first columnar part. The connection part connects a lower end of the first channel body and a lower end of the second channel body. Each of the source layers is connected to an upper end of the first columnar part. Each of the bit lines is connected to an upper end of the second columnar part of every (n+1)-th memory string of a plurality of memory strings arranged in the first direction.
Bibliography:Application Number: US201514818603