MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICES

A manufacturing method for semiconductor devices includes the steps of forming an Ni/Au film that includes an Ni film and an Au film formed over the Ni film over a wiring that is coupled to each of a plurality of electrode pads formed over a principal surface of a semiconductor wafer and arranges ea...

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Bibliographic Details
Main Authors SAITO TAKEHIKO, TORII KATSUHIRO, NISHI TAKAOMI
Format Patent
LanguageEnglish
Published 03.03.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A manufacturing method for semiconductor devices includes the steps of forming an Ni/Au film that includes an Ni film and an Au film formed over the Ni film over a wiring that is coupled to each of a plurality of electrode pads formed over a principal surface of a semiconductor wafer and arranges each of the electrode pads at a different position, grinding a back surface of the semiconductor wafer, performing reduction treatment on a surface of the Ni/Au film, and forming a solder bump over the Ni/Au film. In the reduction treatment, respective processes of flux application, reflow soldering and cleaning are performed and the solder bump is bonded to the Ni/Au film after the reduction treatment has been completed. Thereby, bonding reliability in flip chip bonding of a semiconductor device is improved.
Bibliography:Application Number: US201514829619