METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Improvements are achieved in the properties of a semiconductor device including a MISFET and a nonvolatile memory. Over a gate electrode included in the MISFET and a control gate electrode and a memory gate electrode each included in a memory cell, a stress application film is formed of a silicon ni...

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Bibliographic Details
Main Authors CHAKIHARA HIRAKU, KAWASHIMA YOSHIYUKI, NISHIDA AKIO
Format Patent
LanguageEnglish
Published 03.03.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Improvements are achieved in the properties of a semiconductor device including a MISFET and a nonvolatile memory. Over a gate electrode included in the MISFET and a control gate electrode and a memory gate electrode each included in a memory cell, a stress application film is formed of a silicon nitride film. Then, by removing the silicon nitride film from over the control gate electrode and the memory gate electrode, an opening is formed over the control gate electrode and the memory gate electrode. Then, in a state where the opening is formed in the silicon nitride film, heat treatment is performed to apply a stress to the MISFET. By thus removing the stress application film (silicon nitride film) from over the memory cell, it is possible to avoid the degradation of the properties of the memory cell due to H (hydrogen) in the silicon nitride film.
Bibliography:Application Number: US201514829614