Methods Of Forming Capacitors

A method of forming capacitors includes providing first capacitor electrodes within support material. The first capacitor electrodes contain TiN and the support material contains polysilicon. The polysilicon-containing support material is dry isotropically etched selectively relative to the TiN-cont...

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Bibliographic Details
Main Authors LUGANI GURPREET, TOREK KEVIN J
Format Patent
LanguageEnglish
Published 25.02.2016
Subjects
BASIC ELECTRIC ELEMENTS
CAPACITORS
CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
ELECTRICITY
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Summary:A method of forming capacitors includes providing first capacitor electrodes within support material. The first capacitor electrodes contain TiN and the support material contains polysilicon. The polysilicon-containing support material is dry isotropically etched selectively relative to the TiN-containing first capacitor electrodes using a sulfur and fluorine-containing etching chemistry. A capacitor dielectric is formed over sidewalls of the first capacitor electrodes and a second capacitor electrode is formed over the capacitor dielectric. Additional methods are disclosed.
Bibliography:Application Number: US201514931073