FINFET INCLUDING IMPROVED EPITAXIAL TOPOLOGY

A semiconductor device includes a semiconductor substrate having a plurality of semiconductor fins formed on an upper surface thereof. An epitaxial material is formed on the upper surface of the semiconductor substrate and on an outer surface of the semiconductor fins. The epitaxial material include...

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Bibliographic Details
Main Authors YAMASHITA TENKO, LIU ZUOGUANG, BASKER VEERARAGHAVAN S, YEH CHUNN
Format Patent
LanguageEnglish
Published 18.02.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a semiconductor substrate having a plurality of semiconductor fins formed on an upper surface thereof. An epitaxial material is formed on the upper surface of the semiconductor substrate and on an outer surface of the semiconductor fins. The epitaxial material includes an epi upper surface having a lower region that contacts the semiconductor fins and an upper region formed above the lower region. The upper region extends parallel with an upper surface of the semiconductor fins.
Bibliography:Application Number: US201514927768