Method for Selective Oxide Removal

A method for removing oxide selective to a material comprising at least silicon and at least nitrogen is disclosed, the method comprising providing in a reactor a structure having a surface comprising a region, wherein said region comprises a material comprising at least silicon and at least nitroge...

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Bibliographic Details
Main Authors PARASCHIV VASILE, KUNNEN EDDY
Format Patent
LanguageEnglish
Published 18.02.2016
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS THEREOF
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
NON-METALLIC ELEMENTS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
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Summary:A method for removing oxide selective to a material comprising at least silicon and at least nitrogen is disclosed, the method comprising providing in a reactor a structure having a surface comprising a region, wherein said region comprises a material comprising at least silicon and at least nitrogen, providing on said structure an oxide layer overlying at least a part of said region, and removing said oxide layer selective to said material by etching, thereby exposing at least a part of said at least overlaid part of said region, wherein said etching is done only by providing an etchant gas comprising boron, whereby a voltage bias lower than 30 V is applied to the structure.
Bibliography:Application Number: US201514827774