MAGNETORESISTIVE RANDOM-ACCESS MEMORY CACHE WRITE MANAGEMENT

• Main Author: SOLIHIN YAN
• Format: Patent
• Language: English
• Published: 18.02.2016
• Subjects: CALCULATING; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION ANDCOMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION ANDCOMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THIR OWNENERGY USE; COMPUTING; COUNTING; ELECTRIC DIGITAL DATA PROCESSING; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; PHYSICS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

Technologies are generally described manage MRAM cache writes in processors. In some examples, when a write request is received with data to be stored in an MRAM cache, the data may be evaluated to determine whether the data is to be further processed. In response to a determination that the data is to be further processed, the data may be stored in a write cache associated with the MRAM cache. In response to a determination that the data is not to be further processed, the data may be stored in the MRAM cache.