MECHANISMS FOR FORMING FINFETS WITH DIFFERENT FIN HEIGHTS

Methods for forming a semiconductor device are provided. The method includes forming a first fin and a second fin over a substrate and forming a first isolation structures and a second isolation structure adjacent to the substrate. The first fin is partially surrounded by the first isolation structu...

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Bibliographic Details
Main Authors TIEN BOR-ZEN, CHIANG TSUNG-YU, CHEN KUANG-HSIN, LIN CHUNG-WEI
Format Patent
LanguageEnglish
Published 11.02.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods for forming a semiconductor device are provided. The method includes forming a first fin and a second fin over a substrate and forming a first isolation structures and a second isolation structure adjacent to the substrate. The first fin is partially surrounded by the first isolation structure and a second fin is partially surrounded by the second isolation structure, and the first isolation structure has a dopant concentration higher than that of the second isolation structure.
Bibliography:Application Number: US201514919007