VIA FORMED UNDERLYING A MANGETORESISTIVE DEVICE AND METHOD OF MANUFACTURE

A via underlying a magnetoresistive device is formed to include a lower portion that includes a first material and an upper portion that includes a second material, where the second material is part of the material making up the bottom electrode of the magnetoresistive device. The via is formed by p...

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Bibliographic Details
Main Authors AGGARWAL SANJEEV, MUDIVARTHI CHAITANYA
Format Patent
LanguageEnglish
Published 28.01.2016
Subjects
ELECTRICITY
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Summary:A via underlying a magnetoresistive device is formed to include a lower portion that includes a first material and an upper portion that includes a second material, where the second material is part of the material making up the bottom electrode of the magnetoresistive device. The via is formed by partially filling a via hole with the first material and then filling the remaining portion of the via hole when a layer of the second material is deposited to form the basis for the bottom electrode. The layer of second material is polished to provide a planar surface on which to form the magnetoresistive stack and top electrode. After forming the magnetoresistive stack and top electrode, the layer of second material is etched to form the bottom electrode. Such a via allows the magnetoresistive stack to be formed directly over the via, thereby reducing the area required for each device and increasing density in applications such as MRAMs.
Bibliography:Application Number: US201414340209