PROCESS FOR FABRICATING FIN-TYPE FIELD EFFECT TRANSISTOR (FinFET) STRUCTURE
A process for fabricating a fin-type field effect transistor (FinFET) structure is described. A semiconductor substrate is patterned to form a fin. A spacer is formed on the sidewall of the fin. A portion of the fin is removed, such that the spacer and the surface of the remaining fin together defin...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
07.01.2016
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Subjects | |
Online Access | Get full text |
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Summary: | A process for fabricating a fin-type field effect transistor (FinFET) structure is described. A semiconductor substrate is patterned to form a fin. A spacer is formed on the sidewall of the fin. A portion of the fin is removed, such that the spacer and the surface of the remaining fin together define a cavity. A piece of a semiconductor compound is formed from the cavity, wherein the upper portion of the piece of the semiconductor compound laterally extends over the spacer. |
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Bibliography: | Application Number: US201514855793 |