SEMICONDUCTOR STRUCTURES INCLUDING SELF-ASSEMBLED POLYMER DOMAINS REGISTERED TO THE UNDERLYING SELF-ASSEMBLED POLYMER DOMAINS, TEMPLATES COMPRISING THE SAME, AND METHODS OF FORMING THE SAME

A semiconductor structure comprises a first self-assembled block copolymer material within a trench in a substrate and a second self-assembled block copolymer material overlying the first self-assembled block copolymer material. The first self-assembled block copolymer material comprises self-assemb...

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Bibliographic Details
Main Author MILLWARD DAN B
Format Patent
LanguageEnglish
Published 31.12.2015
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Summary:A semiconductor structure comprises a first self-assembled block copolymer material within a trench in a substrate and a second self-assembled block copolymer material overlying the first self-assembled block copolymer material. The first self-assembled block copolymer material comprises self-assembled polymer domains registered to sidewalls of the trench and extending a length of the trench. The second self-assembled block copolymer material comprises self-assembled polymer domains overlying and registered to the self-assembled polymer domains of the first self-assembled block copolymer material. The first self-assembled block copolymer material comprises a different material from the first self-assembled block copolymer material. A template comprises lines extending a length of a trench in a substrate and separated by openings exposing a floor of the trench in a substrate. Each of the lines comprises the first self-assembled block copolymer material and the second self-assembled block copolymer material overlying the first self-assembled block copolymer material.
Bibliography:Application Number: US201514851494