NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

• Main Author: SAWAMURA KENJI
• Format: Patent
• Language: English
• Published: 10.12.2015
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

According to an embodiment, a nonvolatile semiconductor memory device comprises a memory cell array and a control circuit. The memory cell array includes a plurality of memory cell layers that are stacked. Each memory cell layer comprises a plurality of memory cells formed on a semiconductor layer. The plurality of memory cell layers include: a first memory cell layer where the semiconductor layer is configured of monocrystalline silicon; and a second memory cell layer where the semiconductor layer is configured of polycrystalline silicon. The control circuit, when controlling write or read of data to/from a memory cell belonging to the first memory cell layer, performs control based on a first parameter, and when controlling write or read of data to/from a memory cell belonging to the second memory cell layer, performs control based on a second parameter that differs from the first parameter.