METHOD OF MAKING A SPLIT GATE NON-VOLATILE MEMORY (NVM) CELL

Making a non-volatile memory (NVM) structure uses a semiconductor substrate. One embodiment includes forming a select gate structure including a first dummy material on the semiconductor substrate and forming a control gate structure including a second dummy material on the semiconductor substrate,...

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Bibliographic Details
Main Authors WINSTEAD BRIAN A, LOIKO KONSTANTIN V
Format Patent
LanguageEnglish
Published 03.12.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Making a non-volatile memory (NVM) structure uses a semiconductor substrate. One embodiment includes forming a select gate structure including a first dummy material on the semiconductor substrate and forming a control gate structure including a second dummy material on the semiconductor substrate, where the first dummy material is different from the second dummy material. The embodiment also includes replacing the first dummy material with metal and replacing the second dummy material with polysilicon.
Bibliography:Application Number: US201414291320