METAL REMOVAL

Methods are described herein for etching metal films, such as cobalt and nickel, which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing p...

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Bibliographic Details
Main Authors WANG XIKUN, INGLE NITIN K
Format Patent
LanguageEnglish
Published 03.12.2015
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Summary:Methods are described herein for etching metal films, such as cobalt and nickel, which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials.
Bibliography:Application Number: US201414289190