GRID DESIGN FOR III-V COMPOUND SEMICONDUCTOR CELL

A photovoltaic solar cell for producing energy from the sun including a germanium substrate including a first photoactive junction and forming a bottom solar subcell; a gallium arsenide middle cell disposed on said substrate; an indium gallium phosphide top cell disposed over the middle cell; and a...

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Bibliographic Details
Main Authors HOFFMAN, JR. RICHARD W, VARGHESE TANSEN, PATEL PRAVIN
Format Patent
LanguageEnglish
Published 12.11.2015
Subjects
BASIC ELECTRIC ELEMENTS
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERATION
GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRA-REDRADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, E.G. USINGPHOTOVOLTAIC [PV] MODULES
SEMICONDUCTOR DEVICES
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Summary:A photovoltaic solar cell for producing energy from the sun including a germanium substrate including a first photoactive junction and forming a bottom solar subcell; a gallium arsenide middle cell disposed on said substrate; an indium gallium phosphide top cell disposed over the middle cell; and a surface grid including a plurality of spaced apart grid lines, wherein the grid lines have a thickness greater than 7 microns, and each grid line has a cross-section in the shape of a trapezoid with a cross-sectional area between 45 and 55 square microns.
Bibliography:Application Number: US201514804780