SURFACE PLASMA MODIFICATION OF POROUS THIN-FILMS TO OPTIMIZE PORE FILLING

The present invention describes a process to modify a top portion of a porous ultra low-k (ULK) material in order to maximize porosity filling with a filling material that initially displayed low compatibility with the ULK material. Surface modification is achieved by a plasma treatment, enhancing t...

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Bibliographic Details
Main Authors BRUCE ROBERT L, LIONTI KRYSTELLE, VOLKSEN WILLI, FROT THEO J, MAGBITANG TEDDIE P, DUBOIS GERAUD J
Format Patent
LanguageEnglish
Published 29.10.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention describes a process to modify a top portion of a porous ultra low-k (ULK) material in order to maximize porosity filling with a filling material that initially displayed low compatibility with the ULK material. Surface modification is achieved by a plasma treatment, enhancing the compatibility between the ULK surface and the filling material. The invention obtains high filling levels with minimum modification to the ULK material, as only a thin top portion is modified without significant pore sealing.
Bibliography:Application Number: US201414261357