METHOD FOR A GAN VERTICAL MICROCAVITY SURFACE EMITTING LASER (VCSEL)

Methods and structures for forming vertical-cavity light-emitting devices are described. An n-side or bottom-side layer may be laterally etched to form a porous semiconductor region and converted to a porous oxide. The porous oxide can provide a current-blocking and guiding layer that aids in direct...

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Bibliographic Details
Main Authors LIN CHIA-FENG, CHEN DANTI, HAN JUNG
Format Patent
LanguageEnglish
Published 22.10.2015
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:Methods and structures for forming vertical-cavity light-emitting devices are described. An n-side or bottom-side layer may be laterally etched to form a porous semiconductor region and converted to a porous oxide. The porous oxide can provide a current-blocking and guiding layer that aids in directing bias current through an active area of the light-emitting device. Distributed Bragg reflectors may be fabricated on both sides of the active region to form a vertical-cavity surface-emitting laser. The light-emitting devices may be formed from III-nitride materials.
Bibliography:Application Number: US201514687814