METHODS FOR FABRICATING INTEGRATED CIRCUITS INCLUDING FLUORINE INCORPORATION

Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming an interlayer of dielectric oxide material in a FET region and overlying a semiconductor substrate. A high-K dielectric layer is deposited...

Full description

Saved in:
Bibliographic Details
Main Authors KASHEFI KEVIN, KARLSSON OLOV, PISHAROTY DIVYA, LIMDULPAIBOON RATSAMEE, LEE BONGKI, BESSER PAUL, BODKE ASHISH, FUCHIGAMI NOBI
Format Patent
LanguageEnglish
Published 22.10.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming an interlayer of dielectric oxide material in a FET region and overlying a semiconductor substrate. A high-K dielectric layer is deposited overlying the interlayer. Fluorine is incorporated into the interlayer and/or the high-K dielectric layer.
Bibliography:Application Number: US201414253906