METHODS OF FORMING SEMICONDUCTOR DEVICES, INCLUDING FORMING FIRST, SECOND, AND THIRD OXIDE LAYERS

Methods of forming semiconductor devices are provided. A method of forming a semiconductor device includes forming a first oxide layer in a trench of a substrate, and forming a second oxide layer on the first oxide layer. Moreover, the method includes forming a third oxide layer on the second oxide...

Full description

Saved in:
Bibliographic Details
Main Authors LEE SUNGSAM, CHO MIN HEE, YAMADA SATORU
Format Patent
LanguageEnglish
Published 15.10.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Methods of forming semiconductor devices are provided. A method of forming a semiconductor device includes forming a first oxide layer in a trench of a substrate, and forming a second oxide layer on the first oxide layer. Moreover, the method includes forming a third oxide layer on the second oxide layer.
Bibliography:Application Number: US201514593236