NAND-TYPE FLASH MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME

A NAND-type flash memory device and method for programming the NAND-type flash memory device are provided. The method may include applying a voltage of 0 V to an unselected string select line, applying the voltage of 0 V to a selected bit line, applying a supply voltage to a selected string select l...

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Bibliographic Details
Main Authors SHIN KYUNG-JUN, KANG JOO-HEON, SIM JAE-SUNG
Format Patent
LanguageEnglish
Published 15.10.2015
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A NAND-type flash memory device and method for programming the NAND-type flash memory device are provided. The method may include applying a voltage of 0 V to an unselected string select line, applying the voltage of 0 V to a selected bit line, applying a supply voltage to a selected string select line, and applying a dummy pass voltage to a dummy word line, the dummy pass voltage being in a range between 0 V to a pass voltage. The method may further include applying the supply voltage to an unselected bit line, applying the pass voltage to a selected word line, applying the pass voltage to an unselected word line; and applying a program voltage to the selected word line.
Bibliography:Application Number: US201514672372