METHOD OF RINSING AND DRYING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

Provided is a method of rinsing and drying a semiconductor device, including forming a pattern on a substrate; rinsing the substrate, where the pattern is formed, using a rinse solution; loading the substrate into a dry chamber; injecting supercritical carbon dioxide into the dry chamber such that r...

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Bibliographic Details
Main Authors LEE KUNTACK, KO YONGSUN, CHO YONG-JHIN, MUN CHANGSUP, LEE HYOSAN, KIM SEOKHOON, OH JUNG-MIN, JEONG JIHOON, KIM KWANGSU
Format Patent
LanguageEnglish
Published 08.10.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a method of rinsing and drying a semiconductor device, including forming a pattern on a substrate; rinsing the substrate, where the pattern is formed, using a rinse solution; loading the substrate into a dry chamber; injecting supercritical carbon dioxide into the dry chamber such that rinse solution remaining on the pattern is diluted to have a concentration below 2 percent by weight based on a weight of the rinse solution remaining on the pattern and the supercritical carbon dioxide; and venting the supercritical carbon dioxide such that the dry chamber is maintained at atmospheric pressure to dry the substrate where the pattern is formed.
Bibliography:Application Number: US201514669354