SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME

According to one embodiment, a semiconductor memory device includes a stacked body having a plurality of electrode layers containing boron and silicon, and a plurality of insulating layers each provided between the electrode layers; a channel body penetrating through the stacked body; and a memory f...

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Bibliographic Details
Main Authors HIGUCHI MASAAKI, ISHIGAKI HIROKAZU, SHINGU MASAO, SEKINE KATSUYUKI
Format Patent
LanguageEnglish
Published 17.09.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to one embodiment, a semiconductor memory device includes a stacked body having a plurality of electrode layers containing boron and silicon, and a plurality of insulating layers each provided between the electrode layers; a channel body penetrating through the stacked body; and a memory film provided between the channel body and each of the electrode layer. The memory film includes a tunnel film, a charge storage film, and a block film, provided in order from the channel body side. The block film includes a silicon nitride film, and a first silicon oxide film provided between the silicon nitride film and the electrode layer and being in contact with the electrode layer.
Bibliography:Application Number: US201414482579