Image Device and Methods of Forming the Same

A method of forming of an image sensor device includes a patterned hardmask layer is formed over a substrate. The patterned hard mask layer has a plurality of first openings in a periphery region, and a plurality of second openings in a pixel region. A first patterned mask layer is formed over the p...

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Bibliographic Details
Main Authors HSIEH MING-YING, KUO CHING-SEN, LU WENN, FU SHIHI
Format Patent
LanguageEnglish
Published 10.09.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming of an image sensor device includes a patterned hardmask layer is formed over a substrate. The patterned hard mask layer has a plurality of first openings in a periphery region, and a plurality of second openings in a pixel region. A first patterned mask layer is formed over the pixel region to expose the periphery region. A plurality of first trenches is etched into the substrate in the periphery region. Each first trench, each first opening and each second opening are filled with a dielectric material. A second patterned mask layer is formed over the periphery region to expose the pixel region. The dielectric material in each second opening over the pixel region is removed. A plurality of dopants is implanted through each second opening to form various doped isolation features in the pixel region.
Bibliography:Application Number: US201514721782