SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor storage device according to an embodiment includes a semiconductor layer. A tunnel dielectric film is formed on the semiconductor layer. A charge accumulation layer is formed on the tunnel dielectric film. A block film is formed on the charge accumulation layer. A control gate is for...

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Bibliographic Details
Main Authors AISO FUMIKI, SHINGU MASAO, MATSUO KAZUHIRO, TAKAHASHI KENSEI, TANAKA MASAYUKI
Format Patent
LanguageEnglish
Published 10.09.2015
Subjects
ELECTRICITY
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Summary:A semiconductor storage device according to an embodiment includes a semiconductor layer. A tunnel dielectric film is formed on the semiconductor layer. A charge accumulation layer is formed on the tunnel dielectric film. A block film is formed on the charge accumulation layer. A control gate is formed on the block film. The block film includes a metal oxide film containing nitrogen in a concentration range equal to or lower than 5×1021 atoms/cm3 and consisting mainly of aluminum.
Bibliography:Application Number: US201414310239