SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor storage device according to an embodiment includes a semiconductor layer. A tunnel dielectric film is formed on the semiconductor layer. A charge accumulation layer is formed on the tunnel dielectric film. A block film is formed on the charge accumulation layer. A control gate is for...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
10.09.2015
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor storage device according to an embodiment includes a semiconductor layer. A tunnel dielectric film is formed on the semiconductor layer. A charge accumulation layer is formed on the tunnel dielectric film. A block film is formed on the charge accumulation layer. A control gate is formed on the block film. The block film includes a metal oxide film containing nitrogen in a concentration range equal to or lower than 5×1021 atoms/cm3 and consisting mainly of aluminum. |
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Bibliography: | Application Number: US201414310239 |