SEMICONDUCTOR DEVICE WITH LINE-TYPE AIR GAPS AND METHOD FOR FABRICATING THE SAME

A method includes: forming a first contact hole by etching a first inter-layer dielectric layer; forming a preliminary first conductive plug that fills the first contact hole; forming a bit line structure over the preliminary first conductive plug; forming a first conductive plug by etching the prel...

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Bibliographic Details
Main Authors PARK HAE-JUNG, KANG SANG-KIL, JOE ILL-HEE, HWANG CHANG-YOUN, KWON SE-HAN, PARK DAE-SIK
Format Patent
LanguageEnglish
Published 10.09.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method includes: forming a first contact hole by etching a first inter-layer dielectric layer; forming a preliminary first conductive plug that fills the first contact hole; forming a bit line structure over the preliminary first conductive plug; forming a first conductive plug by etching the preliminary first conductive plug so that a gap is formed between a sidewall of the first contact hole and the first conductive plug; forming an insulating plug in the gap; forming a multi-layer spacer including a sacrificial spacer; forming a second conductive plug neighboring the bit line structures and the first conductive plugs with the multi-layer spacer and the insulating plug therebetween; and forming a line-type air gap within the multi-layer spacer by removing the sacrificial spacer.
Bibliography:Application Number: US201414506393