SELECTIVE LOCAL METAL CAP LAYER FORMATION FOR IMPROVED ELECTROMIGRATION BEHAVIOR
A method of forming a wiring structure for an integrated circuit device includes forming a first metal line within an interlevel dielectric (ILD) layer, and forming a second metal line in the ILD layer adjacent the first metal line; masking selected regions of the first and second metal lines; selec...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
10.09.2015
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Subjects | |
Online Access | Get full text |
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Summary: | A method of forming a wiring structure for an integrated circuit device includes forming a first metal line within an interlevel dielectric (ILD) layer, and forming a second metal line in the ILD layer adjacent the first metal line; masking selected regions of the first and second metal lines; selectively plating metal cap regions over exposed regions of the first and second metal lines at periodic intervals such that a spacing between adjacent metal cap regions of an individual metal line corresponds to a critical length, L, at which a back stress gradient balances an electromigration force in the individual metal line, so as to suppress mass transport of electrons; and wherein the metal cap regions of the first metal line are formed at staggered locations with respect to the metal cap regions of the second metal line, along a common longitudinal axis. |
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Bibliography: | Application Number: US201514721460 |