METHOD OF FABRICATING POLYSILICON LAYER, THIN FILM TRANSISTOR, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME

• Main Authors: PARK JONG-RYUK, SO BYUNG-SOO, YANG TAE-HOON, SEO JIN-WOOK, PARK BYOUNG-KEON, LEE DONG-HYUN, LEE KIL-WON, LEE KI-YONG, CHUNG YUN-MO, CHOI BO-KYUNG
• Format: Patent
• Language: English
• Published: 10.09.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.