METHOD OF FABRICATING A METAL GRID FOR SEMICONDUCTOR DEVICE

A method for manufacturing the image sensor device is provided. The method includes depositing a first dielectric layer over a back surface of a substrate, forming a ridge over the first dielectric layer, depositing a second dielectric layer over the first dielectric layer, including filling in a sp...

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Bibliographic Details
Main Authors WU CHUAN-LING, WANG CHIHIEN, SHIU FENG-JIA, CHEN CHUNANG, CHENG CHIHY-YUAN, MO WANG-PEN
Format Patent
LanguageEnglish
Published 03.09.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for manufacturing the image sensor device is provided. The method includes depositing a first dielectric layer over a back surface of a substrate, forming a ridge over the first dielectric layer, depositing a second dielectric layer over the first dielectric layer, including filling in a space between two adjacent ridges. The method also includes removing the ridge to form a trench in the second dielectric layer and forming a metal grid in the trench.
Bibliography:Application Number: US201414194859