DEVICES WITH THINNED WAFER

Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 μm or below.

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Bibliographic Details
Main Authors MAIER KATHARINA, BROCKMEIER ANDRE, ZORN PETER, GRIESSLER CHRISTIAN, SCHREIBER KAI-ALEXANDER, SOLAZZI FRANCESCO
Format Patent
LanguageEnglish
Published 03.09.2015
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Summary:Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 μm or below.
Bibliography:Application Number: US201414194912