DEVICES WITH THINNED WAFER
Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 μm or below.
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
03.09.2015
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Subjects | |
Online Access | Get full text |
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Summary: | Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 μm or below. |
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Bibliography: | Application Number: US201414194912 |