FORMATION OF AIR-GAP SPACER IN TRANSISTOR

Embodiments of present invention provide a method of forming air spacers in a transistor structure. The method includes forming a gate structure of a transistor on top of a semiconductor substrate; forming a first and a second disposable spacers adjacent to a first and a second sidewall of the gate...

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Bibliographic Details
Main Authors SARDESAI VIRAJ, VEGA REINALDO, ALPTEKIN EMRE, TRAN CUNG
Format Patent
LanguageEnglish
Published 27.08.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Embodiments of present invention provide a method of forming air spacers in a transistor structure. The method includes forming a gate structure of a transistor on top of a semiconductor substrate; forming a first and a second disposable spacers adjacent to a first and a second sidewall of the gate structure; forming a first and a second conductive studs next to the first and the second disposable spacer; removing the first and second disposable spacers to create empty spaces between the first and second conductive studs and the gate structure; and preserving the empty spaces by forming dielectric plugs at a top of the empty spaces.
Bibliography:Application Number: US201414190641