LATERAL-DIMENSION-REDUCING METALLIC HARD MASK ETCH

A combination of gases including at least a fluorocarbon gas, oxygen, and an inert sputter gas is employed to etch at least one opening into an organic photoresist. The amount of oxygen is controlled to a level that limits conversion of a metallic nitride material in an underlying hard mask layer to...

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Bibliographic Details
Main Authors LI WAI-KIN, CHOI SAMUEL S
Format Patent
LanguageEnglish
Published 20.08.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A combination of gases including at least a fluorocarbon gas, oxygen, and an inert sputter gas is employed to etch at least one opening into an organic photoresist. The amount of oxygen is controlled to a level that limits conversion of a metallic nitride material in an underlying hard mask layer to a metal oxide, and causes organic polymers generated from the organic photoresist to cover peripheral regions of each opening formed in the organic photoresist. The hard mask layer is etched with a taper by the oxygen-limited fluorine-based etch chemistry provided by the combination of gases. The taper angle can be controlled such that a shrink ratio of the lateral dimension by the etch can exceed 2.0.
Bibliography:Application Number: US201514701605