HARDMASK FACETING FOR ENHANCING METAL FILL IN TRENCHES

A stack of an interlevel dielectric (ILD) layer, a dielectric cap layer, and a metallic hard mask layer is formed on a substrate. The metallic hard mask layer can be patterned with a first pattern. A photoresist layer is formed over the metallic hard mask layer and is patterned with a second pattern...

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Main Authors VAN DER STRATEN OSCAR, YIN YUNPENG, SANKARAPANDIAN MUTHUMANICKAM, CHEN SHYNG-TSONG, MIGNOT YANN, ARNOLD JOHN C
Format Patent
LanguageEnglish
Published 06.08.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A stack of an interlevel dielectric (ILD) layer, a dielectric cap layer, and a metallic hard mask layer is formed on a substrate. The metallic hard mask layer can be patterned with a first pattern. A photoresist layer is formed over the metallic hard mask layer and is patterned with a second pattern. A combination of the first pattern and the second pattern is transferred into the ILD layer to form a dual damascene trench, which includes an undercut underneath the patterned dielectric cap layer. The metallic hard mask layer is removed and the dielectric cap layer is anisotropically etched to form faceted edges and removal of overhanging portions. A metallic material can be deposited into the dual damascene trench without formation of voids during a metal fill process.
Bibliography:Application Number: US201414172263