SEMICONDUCTOR DEVICE WITH COMBINED POWER AND GROUND RING STRUCTURE
A semiconductor device includes a lead frame, and an integrated circuit die. The lead frame has a flag for supporting the die and leads that surround that flag and die. The lead frame also has ground ring that surrounds the flag and die. First bond wires electrically connect the die to the lead fram...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
23.07.2015
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor device includes a lead frame, and an integrated circuit die. The lead frame has a flag for supporting the die and leads that surround that flag and die. The lead frame also has ground ring that surrounds the flag and die. First bond wires electrically connect the die to the lead frame leads. An insulating layer is disposed on the ground ring, and a power layer is disposed on the insulating layer. The semiconductor device further includes second bond wires that connect the die to the ground ring and third bond wires that connect the die to the power layer. |
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Bibliography: | Application Number: US201414161706 |