PLANAR MOSFETS AND METHODS OF FABRICATION, CHARGE RETENTION

A planar MOSFET includes a plurality of MOSFET cells. Each MOSFET cell includes an epitaxial layer of a first conductivity type, a body region of a second conductivity type inside the epitaxial layer, the second conductivity type having a polarity opposite to the first conductivity type, a source re...

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Bibliographic Details
Main Authors CHAU DUC QUANG, MONG YEUK YIN, LAI MAU LAM
Format Patent
LanguageEnglish
Published 16.07.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A planar MOSFET includes a plurality of MOSFET cells. Each MOSFET cell includes an epitaxial layer of a first conductivity type, a body region of a second conductivity type inside the epitaxial layer, the second conductivity type having a polarity opposite to the first conductivity type, a source region inside the body region, a source contact portion to provide electrical contact with the source region, and a gate portion. A drift region is defined in the epitaxial layer between body regions of adjacent MOSFET cells and the gate portions of the adjacent MOSFET cells across said drift region are separated from each other with electrical insulation. A charge induction terminal is provided on the drift region to induce and store electric charge at said drift region upon application of a charge induction voltage at said charge induction terminal.
Bibliography:Application Number: US201514597233