Semiconductor Structure With Inlaid Capping Layer And Method Of Manufacturing The Same

A method of fabricating a semiconductor structure includes forming a dielectric layer overlaying a substrate; forming a trench in the dielectric layer; forming a first barrier layer lining the trench; forming a conductive layer overlaying the first barrier layer; forming a second barrier layer overl...

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Bibliographic Details
Main Authors CHEN KUANIA, CHI CHIHIEN, HSIEH CHING-HUA, PAN SHINGYANG
Format Patent
LanguageEnglish
Published 16.07.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating a semiconductor structure includes forming a dielectric layer overlaying a substrate; forming a trench in the dielectric layer; forming a first barrier layer lining the trench; forming a conductive layer overlaying the first barrier layer; forming a second barrier layer overlaying the conductive layer; forming a metallic sacrificial layer to cover the second barrier layer and to fill the trench; and performing a polishing process to remove the materials above a bottom portion of the second barrier layer.
Bibliography:Application Number: US201414155682